Senior Postdoctoral Researcher - Advanced Electronic Materials and Devices Group

Institut Català de Nanociència i Nanotecnologia
May 30, 2024
Offerd Salary:Salary will depend on qualifications and demonstrated experience.
Working address:N/A
Contract Type:Temporary
Working Time:Full time
Working type:N/A
Ref info:N/A

Post-doctoral Researchers

Senior Postdoctoral Researcher - Advanced Electronic Materials and Devices



As a flagship research center in nanoscience and nanotechnology, our mission is to open and explore new frontiers of knowledge at the nanoscale, and bring value to society in the form of new understanding, capabilities and innovation, while inspiring and providing broad training to the next generations of researchers.

Our research lines focus on the newly-discovered physical and chemical properties that arise from the behaviour of matter at the nanoscale. ICN2 has been awarded with the Severo Ochoa Center of Excellence distinction for three consecutive periods (2014-2018 and 2018-2022 and 2023-2026). ICN2 comprises 19 Research Groups, 7 Technical Development and Support Units and Facilities, and 2 Research Platforms, covering different areas of nanoscience and nanotechnology.

Job Title: Senior Postdoctoral Researcher

Research area or group: Advanced Electronic Materials and Devices Group

Description of Group/Project :

The Advanced Electronic Materials and Devices (AEMD) group focuses on the material sciences and technology aspects of novel electronic materials, with a strong emphasis on graphene as well as other 2D materials (MoS2). The group also works towards the development of technological applications based on these materials such as electronics, bioelectronics and biosensing, neural interfaces, etc.

The activities cut across different scientific aspects, from the fundamentals (the physics of devices and semiconductors) to materials (growth of graphene and MoS2 materials by CVD and MOCVD, surface functionalisation, advanced characterisation), through to devices (fabrication technology, nanofabrication) and applications (neural implants and biomedical technologies, biosensors, flexible electronics).

Main Tasks and responsibilities:

The candidate will be working in the development of advanced neural interface devices based on 2D materials (graphene, graphene oxide and MoS2). The work will include design of novel device concepts, microelectronic fabrication related activities such as process development and optimization, and extensive device characterization including electrical and electrochemical measurements. The work will also involve proof-of-concept validation of the developed devices and data analysis.

The research activity of the candidate will be part of the FJC2021-046601-I funded by MCIU/AEI /10.13039/501100011033 and the European Union NextGenerationEU/ PRTR and 2021-SGR-01534.


  • Education: PhD in Electronic and Telecommunication Engineering
  • Knowledge
  • Science and technology of neural interfaces and implantable devices
  • Thin-film technology and device microfabrication, flexible electronics
  • 2D materials and technology
  • Electrochemistry
  • Neuroscience, electrophysiology
  • Personal Competences:
  • Teamwork skills
  • Fluent in English (both spoken and written)
  • Summary of conditions:

  • Full time work (37,5h/week)
  • Contract Length: Temporary - 31/12/2024

  • Location: Bellaterra (Barcelona)

  • Salary will depend on qualifications and demonstrated experience.
  • Support to the relocation issues.
  • Life Insurance.
  • Estimated Incorporation date: 01/06/2024

    How to apply:

    All applications must be made via the ICN2 website and include the following:

  • A cover letter.
  • A full CV including contact details.
  • 2 Reference letters or referee contacts.
  • Deadline for applications: 30/05/2024

    Equal opportunities:

    ICN2 is an equal opportunity employer committed to diversity and inclusion of people with disabilities.

    ICN2 is following the procedure for contract of people with disabilities according with article 59 of the Royal Decree 1/2015, of 30 of October.

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