Fabrication Of Thz Double Heterojunction Bipolar Transistor On Inp Substrate M/W

13 Nov 2023

Job Information

Organisation/Company

CNRS

Department

Institut d'électronique, de microélectronique et de nanotechnologie

Research Field

Engineering

Physics

Technology

Researcher Profile

First Stage Researcher (R1)

Country

France

Application Deadline

1 Dec 2023 - 23:59 (UTC)

Type of Contract

Temporary

Job Status

Full-time

Hours Per Week

35

Offer Starting Date

1 Jan 2024

Is the job funded through the EU Research Framework Programme?

Not funded by an EU programme

Is the Job related to staff position within a Research Infrastructure?

No

Offer Description

The goal of the CDD researcher candidate will consist of fabrication semiconductor devices in the Institute's Micro-Nano Fabrication (CMNF) plant. It is about the fabrication of Double Heterojunction Bipolar Transistor (DHBT) InP/InGaAs or InP/GaAsSb on InP substrate in order to make power amplification between 200 and 300 GHz. A characterization component will also be part of the mission. This will involve very high frequency and power characterization at 94 GHz and in the 200-300 GHz band. This work will be carried out in collaboration with the LTM in Grenoble.

On an existing process, the main objective of the activity will consist in optimizing very precisely the technological stages of the fabricating process of the Double Heterojunction Bipolar Transistor (DHBT) and to participate continuously in its development or to develop new processes. The objective is to manufacture and characterize DHBT transistors whose cut-off frequencies are in the THz domain.

The work will be carried out within the ANODE (Advanced Nanometric Device) team of the IEMN which specializes, among other things, in the production and characterization of very high frequency components. THz applications is one of the group's specialties. The activity will be essentially centered on work in a clean room but will also include measurements of the devices made in the IEMN characterization unit. The IEMN is a Joint Research Unit associating the CNRS, the University of Lille, the Polytechnic University Hauts-de-France, Centrale Lille and ISEN JUNIA. Its equipment for the design, manufacture and characterization of devices is at the highest European level. The institute has around 230 permanent staff (professors, researchers, engineers and administrative staff) and around 150 doctoral students. The research carried out at IEMN covers a wide area ranging from the physics of materials and nanostructures to telecommunications systems and acoustic and microwave instrumentation.

Requirements

Research Field

Engineering

Education Level

PhD or equivalent

Research Field

Physics

Education Level

PhD or equivalent

Research Field

Technology

Education Level

PhD or equivalent

Languages

FRENCH

Level

Basic

Research Field

Engineering

Years of Research Experience

None

Research Field

Physics

Years of Research Experience

None

Research Field

Technology

Years of Research Experience

None

Additional Information

Eligibility criteria

The candidate must have a doctoral thesis specializing in micro-nanotechnology with knowledge of nanoscale components intended for microwave and THz applications. Know-how in relation to the fabrication of III-V components would be appreciated. He must have a good experience of clean room device technology and have successfully completed the various technological steps inherent in the fabrication of semiconductor devices. The expected skills are: - Knowledge of semiconductor physics and their applications - Knowledge of clean room fabrication techniques - Optical and electronic lithography - Wet etching, dry etching RIE, ICP,… - Surface treatment - Deposition of metals and dielectric...

Skills in the field of microwave characterization would be a plus: - Characterization of III-V microwave components - DC and hyper frequency characterization from 0.5 to 750 GHz - Load-pull characterization at 94 GHz

Website for additional job details

https: // emploi.cnrs.fr/Offres/CDD/UMR8520-MOHZAK-008/Default.aspx

Work Location(s)

Number of offers available

1

Company/Institute

Institut d'électronique, de microélectronique et de nanotechnologie

Country

France

City

VILLENEUVE D ASCQ

Where to apply

Website

https: // emploi.cnrs.fr/Candidat/Offre/UMR8520-MOHZAK-008/Candidater.aspx

Contact

City

VILLENEUVE D ASCQ

Website

https: // www. iemn.fr/

STATUS: EXPIRED